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AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality

https://doi.org/10.1109/BCICTS54660.2023.10310921

Casamento, Joseph; Nomoto, Kazuki; Nguyen, Thai-Son; Lee, Hyunjea; Savant, Chandrasekhar; Li, Lei; Hickman, Austin; Maeda, Takuya; Shao, Yu-Tsun; Encomendero, Jimy; et al (October 2023, IEEE)

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Intrinsically Switchable GHz Ferroelectric ScAlN SAW Resonators

https://doi.org/10.1109/ISAF51494.2022.9870089

Gund, Ved; Nomoto, Kazuki; Xing, Huili Grace; Jena, Debdeep; Lal, Amit (June 2022, 2022 IEEE International Symposium on Applications of Ferroelectrics (ISAF))

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Laser-Induced Graphene Pressure Sensors Manufactured via Inkjet PCB Printer : Locally Producing Super-Sensitive and Cost-Effective Circular Diaphragm Pressure Gauges

https://doi.org/10.1109/FLEPS53764.2022.9781522

Ivy, Landon; Gund, Ved; Davaji, Benyamin; Ospina, Carlos; Ni, Di; Doerschuk, Peter; Lal, Amit (July 2022, 2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS))

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Multi-level Analog Programmable Graphene Resistive Memory with Fractional Channel Ferroelectric Switching in Hafnium Zirconium Oxide

https://doi.org/10.1109/EFTF/IFCS54560.2022.9850768

Gund, Ved; Davaji, Benyamin; Jadhav, Shubham; Lee, Hyunjea; Jena, Debdeep; Xing, Huili Grace; Lal, Amit (April 2022, 2022 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS))

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Temperature-dependent Lowering of Coercive Field in 300 nm Sputtered Ferroelectric Al _0.70 Sc _0.30 N

https://doi.org/10.1109/ISAF51943.2021.9477328

Gund, Ved; Davaji, Benyamin; Lee, Hyunjea; Asadi, Mohammad Javad; Casamento, Joseph; Xing, Huili Grace; Jena, Debdeep; Lal, Amit (May 2021, Conference: 2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF))

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Epitaxial Sc _x Al ₁₋ _x N on GaN exhibits attractive high-K dielectric properties

https://doi.org/10.1063/5.0075636

Casamento, Joseph; Lee, Hyunjea; Maeda, Takuya; Gund, Ved; Nomoto, Kazuki; van Deurzen, Len; Turner, Wesley; Fay, Patrick; Mu, Sai; Van de Walle, Chris G.; et al (April 2022, Applied Physics Letters)

Epitaxial Sc_xAl₁₋_xN thin films of ∼100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε_r) values relative to AlN. ε_rvalues of ∼17–21 for Sc mole fractions of 17%–25% ( x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that Sc_xAl₁₋_xN has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial Sc_xAl₁₋_xN layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extend transistor operation for power electronics and high-speed microwave applications.
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